PART |
Description |
Maker |
TGA2624 |
9 to 10GHz 18W GaN Power Amplifier
|
TriQuint Semiconductor
|
RFVC1801 RFVC1801S2 RFVC1801PCK-410 |
WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ
|
http:// RF Micro Devices
|
MAX11014BGTMT MAX11015BGTM |
Automatic RF MESFET Amplifier Drain-Current Controllers Automatic RF MESFET Amplifier Drain-Current Controllers SPECIALTY CONSUMER CIRCUIT, PQCC48
|
Maxim Integrated Produc... Maxim Integrated Products, Inc.
|
MAX11014BGTM MAX11015BGTM MAX1101408 |
Automatic RF MESFET Amplifier Drain-Current Controllers
|
Maxim Integrated Products
|
NE76118_00 NE76118 NE76118-T1 NE76118-T2 NE7611800 |
GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
|
California Eastern Labs Duracell NEC[NEC]
|
MAX11014BGTM MAX11015BGTM MAX11015 |
Automatic RF MESFET Amplifier Drain-Current Controllers
|
MAXIM[Maxim Integrated Products]
|
NE67483B |
(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
|
CEL
|
RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system 5.1-5.9 GHz U-NII Power Amplifier The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
NB7V32M NB7V32MMNG NB7V32MMNTXG |
1.8V / 2.5V, 10GHz ÷2 Clock Divider with CML Outputs
|
ON Semiconductor
|
RFRX1001 RFRX1001PCK-410 RFRX1001SB RFRX1001TR13 R |
GaAs MMIC IQ Downconverter 10GHz to 15.4GHz
|
RF Micro Devices
|
F2976EVBI-50OHM |
High Linearity Broadband SP2T 5MHz to 10GHz
|
Integrated Device Techn...
|